| 发明名称 |
Method for making a semiconductor device having a high-k gate dielectric |
| 摘要 |
A method for making a semiconductor device is described. That method comprises forming a high-k gate dielectric layer on a substrate, then forming a capping layer on the high-k gate dielectric layer. After oxidizing the capping layer to form a capping dielectric oxide on the high-k gate dielectric layer, a gate electrode is formed on the capping dielectric oxide.
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| 申请公布号 |
US2004185627(A1) |
申请公布日期 |
2004.09.23 |
| 申请号 |
US20030748090 |
申请日期 |
2003.12.29 |
| 申请人 |
BRASK JUSTIN K.;DOCZY MARK L.;BARNAK JOHN P.;CHAU ROBERT S. |
发明人 |
BRASK JUSTIN K.;DOCZY MARK L.;BARNAK JOHN P.;CHAU ROBERT S. |
| 分类号 |
H01L21/28;H01L21/8238;H01L29/51;(IPC1-7):H01L21/336;H01L21/31;H01L21/320;H01L21/469;H01L21/476;H01L21/823 |
主分类号 |
H01L21/28 |
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