| 摘要 |
<p>PROBLEM TO BE SOLVED: To improve the depth of focus of isolated patterns and to decrease the optical proximity effect at the ends of the isolated patterns or periodic patterns by arranging patterns for supplement near main patterns which have specific transmittance and are inverted in phase. SOLUTION: The main patterns 2 transferred to the surface of a semiconductor substrate by projection exposure in this photomask formed with the patterns by light shielding curtains on a transparent substrate 1 are formed of material films having the transmittance of <40%. The patterns 3, 3a for supplement formed of the light shielding films having light shieldability to irradiation light for exposure are disposed in the peripheral parts of the main patterns 2. The size of the patterns 3, 3a for supplement is preferably smaller than the size of the main patterns 2. The phase difference between the irradiation light for exposure passing the regions not formed with the patterns 2, 3, 3a of the transparent substrate 1 and the irradiation light for exposure passing the main patterns 2 is so adjusted as to attain 180 deg..</p> |
