| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of semiconductor device wherein a bad resolution of resist is suppressed, and the uneven application of an organic polymer material is prevented. SOLUTION: There are formed sequentially on a semiconductor substrate 1 a lower layer conductive film 3, a protective film 5, an insulating film 7, an etching stopper film 9, and an insulating film 11. Holes 6a to 6c are formed for exposing the surface of the protective film 5 using a resist pattern formed on the insulating film 11. A wet processing is applied to the surface of the protective film 5 exposed into the holes 6a to 6c and the surface of the insulating film 11 by making use of thinner containing any acidic component. An organic high polymer material film filled in the holes 6a to 6c and an organic reflection preventing film are formed. Wiring grooves and the holes are formed in the insulating films 11, 7 using the resist pattern formed on the organic reflection preventing film. A plug is formed in the hole, and a wiring is formed along the wiring groove. COPYRIGHT: (C)2005,JPO&NCIPI
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