| 摘要 |
<P>PROBLEM TO BE SOLVED: To attain improvement in element characteristics and reduction of cost by optimizing the structure of a clad layer. <P>SOLUTION: The semiconductor light emitting device includes a first clad layer composed of a first conductive type AlGaAsP or AlGaAs on a substrate of GaAs or GaAsP; a second clad layer, adjacent to the first clad layer, of thickness 0.5 μm or less composed of a first conductive type AlGaInP or AlInP; an active layer, adjacent to the second clad layer, of thickness 0.1 to 1 μm composed of a first or second conductive type AlGaInP or GaInP; a third clad layer, adjacent to the active layer, of thickness 0.5 μm or less composed of a second conductive AlGaInP or AlInP; and a light extraction layer, adjacent to the third clad layer, composed of a second conductive type AlGaP or GaP. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
