| 摘要 |
PURPOSE:To reduce uncertain terms when an optimum value is found and to shorten a calculation time by finding channel resistance from a specific expression based upon the source resistance, drain resistance, and source-drain resistance of an FET to be measured. CONSTITUTION:The voltage between the gate G and source S and the source current are measured while a forward current is supplied to the gate G of the FET to be measured, and the source resistance Rs is found from the rate of variation in said gate-G and source-S voltage to the variation of the measured source current. Further, the gate-G and drain-D voltage and drain current are measured and the drain resistance Rd is found from the ratio of variation of the measured drain current. Further, the drain-D and source-S voltage and source current are measured and the source-S and drain-D resistance Rsd is found from the ratio of variation of the drain-D and source-S voltage to variation of the measured source current. Then, the channel resistance R is found from R=Rsd-(Rs+Rd).
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