| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light emitting device which uses a clear and colorless conductor transmitting light from a visible region to an ultraviolet region, as a substrate to form a vertical structure, and makes the substrate side serve as a surface for emitting light. <P>SOLUTION: A light emitting device 40 comprises a Ga<SB>2</SB>O<SB>3</SB>single-crystal substrate 41, a pn junction formed on the substrate 41, the substrate 41 further comprising a grating constant or a dopant for adjusting a band gap, and the pn junction further comprising a GaN compound semiconductor thin films 42 and 43 of a first conductive type formed on the substrate 41, and a GaN compound semiconductor thin film 44 of the other conductive type reverse to the first conductive type formed on the first conductive type GaN compound semiconductor thin films 42 and 43. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
