| 摘要 |
<p>Disclosed is a positive resist composition for thin-film implantation processes comprising a resin component (A) with an acid-cleavable dissolution inhibiting group whose alkali solubility is increased by the action of an acid, an acid generator component (B) which generates an acid when irradiated with radiation, and a compound (C) having radiation absorbing ability. This positive resist composition is characterized in that the resin component (A) comprises a constitutional unit (a1) derived from a hydroxystyrene and a constitutional unit (a2) obtained by substituting the hydrogen atom in a hydroxyl group of the constitutional unit (a1) with an acid-cleavable dissolution inhibiting group, and the acid-cleavable dissolution inhibiting group mainly contains an acid-cleavable dissolution inhibiting group (II) represented by the following general formula (II). (II) (In the formula, X represents an alicyclic group, an aromatic cyclic hydrocarbon group, or an alkyl group having 1-5 carbon atoms, and R1 represents an alkyl group having 1-5 carbon atoms; or alternatively X and R1 independently represent an alkylene group having 1-5 carbon atoms, and an end of X and an end of R1 are bonded with each other; and R2 represents an alkyl group having 1-5 carbon atoms or a hydrogen atom.)</p> |
