发明名称 |
Method of manufacturing semiconductor MOS transistor device |
摘要 |
A method of manufacturing a metal-oxide-semiconductor (MOS) transistor device is disclosed. A semiconductor substrate having a main surface is prepared. A gate dielectric layer is formed on the main surface. A gate electrode is patterned on the gate dielectric layer. The gate electrode has vertical sidewalls and a top surface. A liner is formed on the vertical sidewalls of the gate electrode. A silicon nitride spacer is formed on the liner. The main surface is then ion implanted using the gate electrode and the silicon nitride spacer as an implantation mask, thereby forming a source/drain region of the MOS transistor device in the main surface. The silicon nitride spacer is removed. A silicon nitride cap layer that borders the liner is deposited. The silicon nitride cap layer has a specific stress status.
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申请公布号 |
US7326622(B2) |
申请公布日期 |
2008.02.05 |
申请号 |
US20050164031 |
申请日期 |
2005.11.08 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
LIU YI-CHENG;HWANG JIUNN-REN;SHIAU WEI-TSUN;HUANG CHENG-TUNG;LIAO KUAN-YANG |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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