| 摘要 |
In a non-volatile memory, the initiation of program verification is adaptively set so that programming time is decreased. In one approach, non-volatile storage elements are programmed based on a lower page of data to have a voltage threshold (V<SUB>TH</SUB>) that falls within a first V<SUB>TH </SUB>distribution or a higher, intermediate V<SUB>TH </SUB>distribution. Subsequently, the non-volatile storage elements with the first V<SUB>TH </SUB>distribution either remain there, or are programmed to a second V<SUB>TH </SUB>distribution, based on an upper page of data. The non-volatile storage elements with the intermediate V<SUB>TH </SUB>distribution are programmed to third and fourth V<SUB>TH </SUB>distributions. The non-volatile storage elements being programmed to the third V<SUB>TH </SUB>distribution are specially identified and tracked. Verification of the non-volatile storage elements being programmed to the fourth V<SUB>TH </SUB>distribution is initiated after one of the identified non-volatile storage elements transitions to the third V<SUB>TH </SUB>distribution from the intermediate V<SUB>TH </SUB>distribution.
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