| 摘要 |
PROBLEM TO BE SOLVED: To improve durability and reduce power consumption by optimizing both a protective function and operating voltage in the semiconductor light- emitting device of an assembly which is changed into a composite element with a light-emitting element, while using a Zener diode as an electrostatic protective element. SOLUTION: In the light-emitting device, in which a Zener diode 6 for electrostatic protection and a flip-chip type light-emitting element 1 are changed into a composite element and loaded on a lead frame 10, etc., the carrier concentration of an Si substrate in the Zener diode 6 is kept within a range of 2×10<18> cm<-3> to 1×10<19> cm<-3> , and power consumption is lowered and the breakdown of the semiconductor light-emitting element is prevented by ensuring 9 Zener voltage Vz required for the reduction in the operating voltage of the Zener diode and the electrostatic protection of the semiconductor light-emitting element. |
