| 摘要 |
<P>PROBLEM TO BE SOLVED: To suppress the surge voltage of a free-wheeling diode provided to a semiconductor device constituting each arm of a power converting apparatus, and reduce the turn-on loss of the semiconductor device. <P>SOLUTION: In the gate driving device, a delaying circuit comprising a resistance R and a capacitor C, a resistance Rg(on)1, and a transistor TR10 are connected so as to be different from conventional gate driving circuits which have a problem. Thereby, a semiconductor device IGBT is turned on by the resistance Rg(on) in the low-current region of the reverse recovery time of a free-wheeling diode, and is turned on by the parallel resistance comprising a resistance Rg(on) and the Rg(on)1 in the high-current region of the reverse recovery time of the free-wheeling diode respectively so as to solve the problem. <P>COPYRIGHT: (C)2010,JPO&INPIT |
