| 摘要 |
PURPOSE:To shortening the time of cleaning a molecular beam crystal growth apparatus and to reduce the deteriorations of the apparatus by generating a plasma between a rotary substrate holder and the inner wall of the apparatus to ionize an impurity adhered to the wall and exhausting it by an ion pump. CONSTITUTION:A rotary substrate holder 1 is electrically insulated from a substrate manipulator port 2, and a high frequency power can be supplied from a high frequency high voltage power source 3. Inert gas such as Ar, N2 or Ne is introduced into a molecular beam crystal growth apparatus 6 from a plasma generating gas inlet 4 with a needle valve 5, the gas pressure is regulated by the valve 5 to approx. 5x10<6>Torr, and high frequency power of several tens kV is then applied through the power source 3 to the holder 1. Then, a plasma is generated in a growing chamber 7. Impurity gas absorbed to the inner wall of the apparatus is ionized by the generation of the plasma. Since an ion pump 8 is used in the exhaust system of the apparatus to evacuate in oil-free superhigh vacuum, the ionized gas is exhausted by the pump 8.
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