发明名称 |
APPARATUSES AND METHOD FOR OVER-VOLTAGE EVENT PROTECTION |
摘要 |
Circuits, integrated circuits, apparatuses, and methods, such as those for protecting circuits against electrostatic discharge events are disclosed. An example apparatus comprises a thyristor coupled to a node and configured to limit the voltage and discharge the current associated with an over-voltage event at the node. The over-voltage event includes a negative voltage having a magnitude that exceeds a trigger voltage of the thyristor, The example apparatus further comprising a transistor coupled to the thyristor and configured to adjust the magnitude of the trigger voltage. |
申请公布号 |
US2016172847(A1) |
申请公布日期 |
2016.06.16 |
申请号 |
US201615050238 |
申请日期 |
2016.02.22 |
申请人 |
Micron Technology, Inc. |
发明人 |
Davis James;Chaine Michael |
分类号 |
H02H9/04 |
主分类号 |
H02H9/04 |
代理机构 |
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代理人 |
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主权项 |
1. An apparatus, comprising:
a conductive path circuit configured to discharge current associated with an over-voltage event at an input node responsive to a voltage of the input node having a magnitude that exceeds a trigger voltage; and a trigger circuit coupled to the conductive path circuit, the trigger circuit comprising:
a first transistor coupled to the conductive path circuit and configured to adjust the magnitude of the trigger voltage; anda lateral bipolar junction transistor merged with the first transistor and wherein the first transistor and the bipolar junction transistor share at least two doped regions. |
地址 |
Boise ID US |