发明名称 APPARATUSES AND METHOD FOR OVER-VOLTAGE EVENT PROTECTION
摘要 Circuits, integrated circuits, apparatuses, and methods, such as those for protecting circuits against electrostatic discharge events are disclosed. An example apparatus comprises a thyristor coupled to a node and configured to limit the voltage and discharge the current associated with an over-voltage event at the node. The over-voltage event includes a negative voltage having a magnitude that exceeds a trigger voltage of the thyristor, The example apparatus further comprising a transistor coupled to the thyristor and configured to adjust the magnitude of the trigger voltage.
申请公布号 US2016172847(A1) 申请公布日期 2016.06.16
申请号 US201615050238 申请日期 2016.02.22
申请人 Micron Technology, Inc. 发明人 Davis James;Chaine Michael
分类号 H02H9/04 主分类号 H02H9/04
代理机构 代理人
主权项 1. An apparatus, comprising: a conductive path circuit configured to discharge current associated with an over-voltage event at an input node responsive to a voltage of the input node having a magnitude that exceeds a trigger voltage; and a trigger circuit coupled to the conductive path circuit, the trigger circuit comprising: a first transistor coupled to the conductive path circuit and configured to adjust the magnitude of the trigger voltage; anda lateral bipolar junction transistor merged with the first transistor and wherein the first transistor and the bipolar junction transistor share at least two doped regions.
地址 Boise ID US