REVERSE-CONDUCTING GATED-BASE BIPOLAR-CONDUCTION DEVICES AND METHODS WITH REDUCED RISK OF WARPING

摘要

Reverse-conducting IGBTs where the collector side includes diode terminal regions, and the semiconductor material is much thicker through the diode terminal regions than it is through the collector regions. This exploits the area fraction which is taken up by the diode terminal regions to provide increased rigidity for the wafer, and thus avoid warping.