PREDICTING METHOD FOR SET TIME AND DATA RETENTION TIME OF PCRAM

摘要

The present invention provides a method for predicting a set time and a data retention time of a phase change memory device, comprising the following steps of: measuring curvature changes of a substrate while raising a temperature of the substrate and a member formed with a film of a phase-change material on at least one surface of the substrate; deriving a crystallization temperature (Tx) and a super-cooled liquid temperature region (Tx-Tg) of the phase-change material from the measured curvature changes; and predicting a set time and a data retention time by mapping the crystallization temperature (Tx) with the super-cooled liquid temperature region (Tx-Tg), or, comprising the following steps of: measuring curvature changes of a substrate while raising a temperature of the substrate and a member formed with a film of a phase-change material on at least one surface of the substrate; deriving a crystallization temperature (Tx) and fragility of the phase-change material from the measured curvature changes; and predicting a set time and a data retention time by mapping the crystallization temperature (Tx) with an inverse number of the fragility. The present invention facilitates evaluating real-time performance characteristics of the phase change memory device.