发明名称 SPUTTERING APPARATUS
摘要 PROBLEM TO BE SOLVED: To make it possible to measure a substrate temp. during sputtering and to measure and manage substrate temp. distribution at the time of deposition by arranging a plurality of temp. sensors on the rear side of the substrate to be deposited with a thin film by sputtering and controlling a substrate heating means in accordance with the detected temp. SOLUTION: A plasma is generated in the space between a target 2 and substrate 4 arranged to face each other in a vacuum chamber 1 to sputter the target 2, by which the thin film is deposited on the substrate 4. At this time, the substrate 4 is heated to a prescribed temp. by the heating means 7 mounted at a substrate stage 3 disposed on the rear surface side thereof. This substrate heating means 7 is preferably any among a resistance heating method, radiation heating method or gas heating method. Further, the plurality of phosphor temp. sensors inserted into the apertures 3a of the substrate stage 3 are brought into tight contact with the rear surface of the substrate 4. Transmission fibers 6 connected thereto are extended to the outside of the vessel through through-holes 3b and are connected to detecting means (not shown in Fig.) to detect the substrate temp. Feedback signals are transmitted to a substrate temp. control means.
申请公布号 JPH11222673(A) 申请公布日期 1999.08.17
申请号 JP19980034354 申请日期 1998.01.30
申请人 HOYA CORP 发明人 KURIKAWA AKINORI;SHIYOUKI TSUTOMU
分类号 C23C14/34;C23C14/50;C23C14/54;G03F1/22;H01L21/203 主分类号 C23C14/34
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