| 摘要 |
PURPOSE:To easily obtain an edge detection signal with a prescribed pulse width by increasing the ON-resistance of a P-channel MOSFET for load, providing another P-channel MOSFET connected in parallel with the said load MOSFET so as to bring a gate input to be an inverted delay signal to an input signal. CONSTITUTION:P-channel MOSFETs 6, 8 are provided to N-channel MOSFETs 2, 4 to constitute an input transition detection circuit detecting the leading of an input signal X0. The ON-resistance RP6 of the FET 6 is selected to satisfy the relation of RP6>>RN2+RN4 in comparison with the ON-resistances RN2, RN4 of the FETs 2, 4 so as to descends a detection signal Y at a high speed to the leading of an input signal X0, and the pulse width of a detection signal Y is selected freely by a delay circuit 10 and at the trailing of the inverse of a signal X1, the FET 8 is made conductive thereby raising the detection signal Y at a high speed. Thus, the detection signal of the input transition having a pulse width set by the delay circuit 10 is generated at a high speed. |
