| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride group semiconductor light-emitting element comprising a p-type stride group semiconductor layer and method for manufacturing it through activation of the p-type nitride group semiconductor layer comprising impurities of group II elements without heating. SOLUTION: P-type nitride group semiconductor layers 15, 16, and 17 which are not activated, in spite of the significant amount impurities of group II elements contained are irradiated with laser light of 10 W/cm<2> or higher to 500 W/cm<2> or lower for activation. Here, an n-type impurity is introduced into the p-type nitride group semiconductor layer for further improved performance, patterning of laser light irradiation provides the effect of a current bottleneck structure 16a, and partial change in light intensity changes activation percentage for controlling the current density and the application of electric field. |
