发明名称 Combined wafer production method with laser treatment and temperature-induced stresses
摘要 The present invention relates to a method for the production of layers of solid material. The method according to the invention comprises at the very least the steps of providing a solid body (2) for the separation of at least one layer of solid material (4), generating defects by means of at least one radiation source, in particular a laser, in the inner structure of the solid body in order to determine a detachment plane along which the layer of solid material is separated from the solid body, and applying heat to a polymer layer (10) disposed on the solid body (2) in order to generate, in particular mechanically, stresses in the solid body (2), due to the stresses a crack propagating in the solid body (2) along the detachment plane (8), which crack separates the layer of solid material (4) from the solid body (2).
申请公布号 US2016254232(A1) 申请公布日期 2016.09.01
申请号 US201415028332 申请日期 2014.10.08
申请人 SILECTRA GMBH 发明人 Drescher Wolfram;Richter Jan;Beyer Christian
分类号 H01L23/00;B23K26/0622;H01L23/544;B23K26/00 主分类号 H01L23/00
代理机构 代理人
主权项 1. A method for the production of layers of solid material, comprising at the very least the following steps: providing a solid body (2) for the separation of at least one layer of solid material (4), generating defects by means of at least one radiation source (18), in particular a laser, in the inner structure of the solid body in order to determine a detachment plane along which the layer of solid material is separated from the solid body, providing a receiving layer (10) for holding the layer of solid material (4) on the solid body (2), applying heat to the receiving layer (10) in order to generate, in particular mechanically, stresses in the solid body (2), due to the stresses a crack propagating in the solid body (2) along the detachment plane (8), which crack separates the layer of solid material (4) from the solid body (2).
地址 Dresden DE
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