METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

摘要

In a method of manufacturing a semiconductor device according to an embodiment, a lead frame is provided, the lead frame having a trench part formed thereon so as to communicate bottom surfaces of a first lead and a second lead, which are coupled to each other between device regions adjacent to each other. Then, after a part of a coupling part between the first and second leads is cut by using a first blade, metal wastes formed inside the trench part are removed. Then, after the metal wastes are removed, a metal film is formed on exposed surfaces of the first and second leads by a plating method, and then, a remaining part of the coupling part between the first and second leads is cut by using a second blade. At this time, the cutting is performed so that the second blade does not contact the trench part.

主权项

1. A method of manufacturing a semiconductor device comprising the steps of:
(a) providing a lead frame including: a first device region having a first chip mounting part having a top surface with a first semiconductor chip mounted thereon and a plurality of leads including a first lead arranged in vicinity of the first chip mounting part; a second device region having a second chip mounting part having a top surface with a second semiconductor chip mounted thereon and a plurality of leads including a second lead arranged in vicinity of the second chip mounting part and coupled to the first lead, the second device region being arranged adjacent to the first device region; and a sealing body collectively sealing the first device region and the second device region, the lead frame having such a trench part formed thereon as extending in a first direction so as to communicate with a first lead bottom surface of each of the first lead and the second lead extending in the first direction and having a narrower width in a second direction orthogonal to the first direction than a width of the first lead bottom surface of each of the first lead and the second lead; (b) forming a cutting part in a coupling part between the first lead and the second lead by cutting a part of the coupling part between the first lead and the second lead from the first lead bottom surface side by using a first blade moving in the second direction; (c) after the step of (b), removing a metal waste formed inside the trench part; (d) after the step of (c), forming a first metal film by performing a plating method to an exposed part of the first lead and the second lead including the cutting part from the sealing body; and (e) after the step of (d), separating the first device region and the second device region from each other by cutting a remaining part of the coupling part between the first lead and the second lead from the first lead bottom surface side by using a second blade moving in the second direction and having a narrower width than a width of the first blade, wherein, in the step of (e), the remaining part is cut so that the second blade does not contact a first lead side surface forming the cutting part so as to be continued to the first lead bottom surface of each of the first lead and the second lead.