发明名称 半導体装置
摘要 To solve a problem in that an antenna or a circuit including a thin film transistor is damaged due to discharge of electric charge accumulated in an insulator (a problem of electrostatic discharge), a semiconductor device includes a first insulator, a circuit including a thin film transistor provided over the first insulator, an antenna which is provided over the circuit and is electrically connected to the circuit, and a second insulator provided over the antenna, a first conductive film provided between the first insulator and the circuit, and a second conductive film provided between the second insulator and the antenna.
申请公布号 JP5985678(B2) 申请公布日期 2016.09.06
申请号 JP20150036152 申请日期 2015.02.26
申请人 株式会社半導体エネルギー研究所 发明人 及川 欣聡;江口 晋吾
分类号 H01L21/822;G06K19/077;H01L21/3205;H01L21/768;H01L23/522;H01L27/04;H01L29/786;H01Q23/00 主分类号 H01L21/822
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