Method for processing silicon-based wire optical waveguide

摘要

A method is provided for processing a silicon-based wire optical waveguide, by which an optical transmission loss of the silicon-based wire optical waveguide due to ion irradiation with high energy is suppressed, and an end portion of the silicon-based wire optical waveguide that is three-dimensionally curved in a self-aligning manner is obtained. According to the method a protective film is selectively formed on the silicon-based wire optical waveguide exclusive of the end portion of the silicon-based wire optical waveguide; and ions are implanted to the silicon-based wire optical waveguide in a particular direction, so as to curve the end portion of the silicon-based wire optical waveguide to the particular direction in a self-alignment manner.

主权项

1. A method for processing a silicon-based wire optical waveguide, comprising a step of preparing an optical circuit board having plural silicon-based wire optical waveguides formed through a supporting layer; a step, for silicon-based wire optical waveguide that has an end portion among the silicon-based wire optical waveguides, of removing the supporting layer that is under the end portion of the silicon-based wire optical waveguide; a step of forming a protective film selectively on the silicon-based wire optical waveguide exclusive of the end portion of the silicon-based wire optical waveguide; and a step of implanting ions to the silicon-based wire optical waveguide in a particular direction, so as to curve the end portion of the silicon-based wire optical waveguide to the particular direction in a self-aligned manner.