发明名称 |
MEASUREMENT FOR TRANSISTOR OUTPUT CHARACTERISTICS WITH AND WITHOUT SELF HEATING |
摘要 |
A method of measuring semiconductor output characteristics is provided that includes connecting a pulse generator to the gate structure of a semiconductor device, and applying a plurality of voltage pulses at least some of which having a different pulse width to the gate structure of the semiconductor device. The average current is measured from the drain structure of the device for a duration of each pulse of the plurality of pulses. From the measured values for the average current, a self-heating curve of the average current divided by the pulse width is plotted as a function of the pulse width. The self-heating curve is then extrapolated to a pulse width substantially equal to zero to provide a value of drain current measurements without self-heating effects. |
申请公布号 |
US2016266195(A1) |
申请公布日期 |
2016.09.15 |
申请号 |
US201514657437 |
申请日期 |
2015.03.13 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
Jenkins Keith A.;Linder Barry P. |
分类号 |
G01R31/26;G01R31/02 |
主分类号 |
G01R31/26 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
Armonk NY US |