| 摘要 |
1,153,794. Silicon nitride films. INTERNATIONAL BUSINESS MACHINES CORP. 7 Oct., 1966 [11 Oct., 1965], No. 44808/66. Heading C1A. [Also in Division H1] A method of depositing a film of Si 3 N 4 on a substrate comprises supporting the substrate in a reaction zone, introducing into the zone and across the substrate surface a mixture of SiH 4 , N2 or a gaseous compound of nitrogen such as NH 3 , and sufficient H 2 carrier gas to slow down the reaction, heating the substrate to above 500‹ C., whereby a pin-hole free film of Si 3 N 4 is pyrolytically formed on the surface of the substrate. The substrate, which may be Si, Ge, SiO 2 , or graphite, is preferably heated to 700‹ to 1100‹ C. by RF heating. |
