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发明名称
MONOLITHISCHE INTEGRIERTE HALBLEITERSTRUKTUR MIT PLANAREN UEBERGAENGEN, DIE VON AEUSSEREN ELEKTROSTATISCHEN FELDERN ABGESCHIRMT SIND
摘要
申请公布号
DE2823629(A1)
申请公布日期
1978.12.07
申请号
DE19782823629
申请日期
1978.05.30
申请人
SGS-ATES COMPONENTI ELETTRONICI S.P.A.
发明人
PRESTILEO,VINCENZO,DR.;CARMINA,PAOLO,DR.;FORONI,MARIO,DR.
分类号
H01L21/761;H01L29/06;H01L29/40;(IPC1-7):H01L27/04
主分类号
H01L21/761
代理机构
代理人
主权项
地址
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