| 发明名称 |
METHOD OF MANUFACTURING A LOCOS SEMICONDUCTOR DEVICE |
| 摘要 |
A method of manufacturing LOCOS transistors in which base doping, emitter doping and emitter metallization are provided via the same aperture. Problems at the edge of the sunken oxide are eliminated by a two-stage doping technique so that the channel stopper diffusion in the epitaxial layer may be omitted, which presents particular advantages in the manufacture of I2L devices. |
| 申请公布号 |
DE2861353(D1) |
申请公布日期 |
1982.01.28 |
| 申请号 |
DE19782861353 |
申请日期 |
1978.07.31 |
| 申请人 |
N.V. PHILIPS' GLOEILAMPENFABRIEKEN |
发明人 |
VAN GILS, JOHANNES ANTONIUS ANDREAS |
| 分类号 |
H01L21/32;H01L21/331;H01L21/762;H01L21/8226;H01L27/02;H01L27/082;H01L29/10;H01L29/73;(IPC1-7):H01L21/76;H01L21/26 |
主分类号 |
H01L21/32 |
| 代理机构 |
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代理人 |
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