| 摘要 |
PURPOSE:To contrive to enhance damp-proof and contamination-proof property of a semiconductor element by a method wherein after an Si substrate is fixed on a lead frame and is connected, the upper face thereof is covered with polyimide resin, and after it is dried, mounting is performed. CONSTITUTION:An IC chip 4 is fixed on the lead frame 5 with silver paste, and is connected with gold wires 6. After then polyimide resin 7 is dropped thereon to cover the whole surface, and it is dried at about 200 deg.C to form a protective film of about 50-100mu. By this constitution, thickness of film can be enlarged remarkably as compared with film thickness of about 1-3mu of the customary polyimide resin film, and because etching process is needless, increase of number of process is small, and the favorable protective film can be formed. |
