| 摘要 |
PURPOSE:To increase the corrosion resistance of a semiconductor device by employing as the second wire of a lower layer aluminum, as an insulating film a Ti layer having good bonding property and as an upper layer a Cu layer having good corrosion resistance and conductivity and forming an Au film via Ni on the surface to be bonded. CONSTITUTION:A diffused region 2 is formed in an Si substrate 1. An oxidized film 3 is covered on the substrate. An aluminum wire is formed as the first wire in the contact. A silicate glass film 6 is covered on the contact. The aluminum wire is partly exposed via the through hole. Ti and Cu are deposited on the overall surface to form the second wire layers 8, 9. A passivation film 10 is covered thereon, is then patterned and etched to form the pattern in which the bonding pad of the second wire is punched. An Ni film 12 is formed as a primary layer on the surface of the Cu film of this pad. Then, an Au film 13 is formed. In this manner, since the Au is used partly, it can be manufactured inexpensively, and the corrosion resistance can be increased by the use of the passivation film. |
