摘要 |
PURPOSE:To obtain a sufficient detecting output practically usable even for a magnetic bubble memory chip having high density and high grade intagrated circuit by making the length of a magnetic bubble detector line >=25% of length of one side of a magnetic bubble chip. CONSTITUTION:At the upper side of a magnetic bubble memory chip, a magnetic bubble detector 4' is formed over almost the entire range toward the line direction (A-A'). A length L2 of the detector 4' toward the A-A' has a length satisfying the condition of L2>=0.25L1, where L1 is length of one side of the magnetic bubble memory chip and L2 is the length of detector 4'. Accompanied with high density and integration of magnetic bubble memory chips, the magnetic bubble diameter is made as about <2mum and the lateral length L2 of the detector is made about >25%, allowing to decrease the temperature rise in magnetic bubble memory material, to increase the temperature characteristics and to remarkably improve the transfer margin of the detector. |