| 摘要 |
PURPOSE:To determine the thermal resistance of a semiconductor device from the active region thereof to the outside in the state of the working operation of the device, by finding the change in temperature of the active region from the thermal dependency of the characteristic values of the device and the difference in the characteristic values in the state of double operations thereof, and by dividing the change by the difference in a consumed power. CONSTITUTION:An information retention time period t of MOS dynamic RAM shows such thermal dependency as expressed by t=tOeE<a/>KT... (1), wherein t0 is a specific constant, K is a Boltzmann constant, T is a temperature in an active region, and Ea is an activation energy. The dependency of the information retention time period on an ambient temperature is measured by a prescribed signal pattern, and the activation energy in the formula (1) is determined. Then, the thermal resistance R is determined from the consumed power PH in a test signal pattern SH for a large consumed power and from the consumed power PL in a test pattern SL for a small consumed power, and from information retention time periods tH and tL. The thermal resistance is calculated by conducting the operation of R=DELTAt/(PH-PL), where DELTAt is the difference in temperature between the patterns SH and SL. |
