| 摘要 |
PURPOSE:To obtain a semiconductor device having a high withstand voltage by a method wherein the reversely conductive region is formed by diffusion in a single conductive semiconductor substrate, and when the whole surface is to be covered with an insulating layer body, a window is to be opened, and a conductive layer to come in contact with the diffusion region is to be formed extending over the layer body, an oxide layer is made to be interposed between the layer body and the substrate. CONSTITUTION:The P type region 3 is formed by diffusion on the main face 2 side of the N type Si substrate 1, and a semiinsulating layer 21 consisting of a semiinsulating polycrystalline Si layer containing oxygen and a semiinsulating polycrystalline Si layer containing nitrogen is adhered on the whole surface. Then an insulating layer 22 consisting of SiO2 is made to grow thereon according to the CVD method to form the insulating layer body 5, while at this time, the oxide layer 31 is made to be interposed between the layer 21 and the main face 2. After then, the window 4 corresponding to the region 3 is opened in the layer body 5 and in the layer 31, and the conductive layer 7 to come in contact with the region 3 is adhered extending over the layer body 5. Accordingly a capacitor having the layers 31, 22 as the dielectric layers is constituted, and a positive electric charge 32 is made to be generated in the substrate 1 under the layer 31 to make the element to have the high withstand voltage. |
