Deposition of metals or their cpds. onto conducting substrates - in ion plating reactor using two glow discharges in inert or reactive gases

摘要

The reactor is connected to a vacuum pump, and can be fed with inert or reactive gases. In the lower part of the reactor is a plate (a) on which the substrates are located below an upper target plate (b). Plate (b) is located on the bottom surface of a box (c) forming an emitter and creating a magnetic field. The target is subjected to this field and also to a first cathode voltage, so an abnormal glow discharge causes sputtering and sublimation of target (b). The substrates and plate (a) are subjected to a separate cathode voltage creating a second abnormal glow discharge controlling the structure and adherence of the deposit. The particles released from the target (b) are carried mainly by gravity onto the substrates. Used for example, the deposition of TiC, TiN, Al2O3, or chromium carbide onto ferrous or non-ferrous metal substrates.