| 摘要 |
Solid state, quantum mechanical, electron or hole wave devices (100) formed from superlattice structures (120) provide, among other things, energy selectivity for substantially ballistic electron or hole wave propagation in the superlattice structures at energies above the superlattice potential energy barriers. The devices are designed by transforming designs for optical, thin film filter into designs for the semiconductor devices. The transformation, for electron wave devices, includes mapping the optical phase index into a solid state phase index which is proportional to the square root of the product of the electron kinetic energy and the electron effective mass and mapping the optical amplitude index into a second solid state amplitude index which is proportional to the square root of the electron kinetic energy divided by the electron effective mass. One embodiment is a tunable, biased, semiconductor superlattice, electron interference filter/emitter (1100) which can serve, for example, as a hot emitter in a ballistic transistor. Another embodiment is a semiconductor, quantum well, electron or hole slab waveguide (2100) which includes a substrate semiconductor layer (2200), a film semiconductor layer (2201), and a cover semiconductor layer (2202). |
