| 摘要 |
PURPOSE: To obtain a resist material capable of reducing the depletion rate of the film thickness at the time of being irradiated with fin ultraviolet ray by using a specific polymer. CONSTITUTION: The specific polymer is used in the resist. The polymer is expressed as a material produced by the interaction of at least 3 kinds of monomers, That is, the polymer is expressed as a reaction product of a polar monomer having SO2 , >=1.5deby polarity and >=0.5g/100g water solubility in water of pH7 with a monomer having a substituent making the polymer soluble in a solvent or a substituent producing a composition having different solubility from that of the material unexposed with radiation by the reaction with a species generated by the interaction of the material with radiation. The material is produced mainly to be used as a reactive body with the species generated with the irradiation and is also used as a matrix material in a dissolution inhibition system. |
