| 摘要 |
PURPOSE: To form a photo-oxidation pattern with good sensitivity and to obtain resolution for small dimensions by incorporating a specified compsn. into a material having sensitivity for radiation on a substrate and rendering the material to be insoluble. CONSTITUTION: A polymer is composed of a gas phase expressed by RxSiHy, wherein R is an org. element and (x) and (y) satisfy 0.2<x<1.5 and 0.2<y<1.5, shows advantageous characteristics for lithographic processes. In this method, an especially advantageous polymer can be produced by discharge deposition from a gas phase by using RSiH3 precursor such as methyl silane, ethyl silane and phenylsllane, and the produced polymer essentially has Si-(Si(Si)n -Si bond network. The material produced by plasma deposition under typical conditions can be patterned and developed without using a liquid process although the material is insoluble (with <20% solubility of the initial weight in toluene). Therefore, the material is suitable for the environment of clustered or highly integrated processes. |
