发明名称 |
MESFET mixer circuit having a pulse doped structure |
摘要 |
An FET mixer circuit having a stable input impedance uses two tandem-connected GaAs MESFET's (1) and (2) of pulse doped structure instead of a conventional MESFET or a HEMT, as an active device. A gate biasing point for the FET (1) is set around a pinch-off point of a mutual conductance, and a gate biasing point for the FET (2) is set in a region which assures non-change of a mutual conductance with respect to the increase of a gate voltage. Thus, a mixer circuit having a good isolation characteristic for an RF signal and a local oscillation signal and exhibits substantially no change in the input impedance is attained.
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申请公布号 |
US5396132(A) |
申请公布日期 |
1995.03.07 |
申请号 |
US19930024751 |
申请日期 |
1993.03.02 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
SHIGA, NOBUO |
分类号 |
H03D7/12;(IPC1-7):H03D7/12 |
主分类号 |
H03D7/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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