发明名称 |
Method of manufacturing shallow junction field effect transistor |
摘要 |
Shallow junctions n- and p-channel field effect transistors are formed with a single ion implant into a conformal tungsten silicide layer. Although phosphorous and boron are implanted into the same silicide regions, the phosphorous prevents the boron from outdiffusing.
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申请公布号 |
US5395787(A) |
申请公布日期 |
1995.03.07 |
申请号 |
US19930160701 |
申请日期 |
1993.12.01 |
申请人 |
AT&T CORP. |
发明人 |
LEE, KUO-HUA;LIU, CHUN-TING;LIU, RUICHEN |
分类号 |
H01L29/78;H01L21/265;H01L21/8238;H01L27/092;(IPC1-7):H01L21/265 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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