发明名称 COMPOUND SEMICONDUCTOR THIN FILM FORMING METHOD AND MANUFACTURE OF SOLAR CELL
摘要 PROBLEM TO BE SOLVED: To easily form a compound semiconductor thin film having a large area by coating a substrate with solution in which organic metal compound is dissolved in organic solvent and then heat-treating it in a reducible atmosphere containing the hydride of a nonmetallic element. SOLUTION: The solution of organic metal compound coating a substrate is heat-treated in a reducible atmosphere containing the hydride of a nonmetallic element or its derivative. Organic solvent is evaporated, then metal is liberated from the organic metal compound, reacted with the hydride of the nonmetallic element or its derivative to form a compound semiconductor thin film made of metal-nonmetal. This method is repeated to form an n-type CdS polycrystal thin film 12 and a p-type CdTe polycrystal thin film 13 on a glass board 11. Further, an ohmic electrode 14 made of Au is formed. An ohmic electrode 1 made of In is formed on the exposed film 12 as a solar cell. Thus, the compound semiconductor thin film is easily formed on the substrate having a large area.
申请公布号 JPH09181000(A) 申请公布日期 1997.07.11
申请号 JP19950338878 申请日期 1995.12.26
申请人 TOSHIBA CORP 发明人 BEPPU TATSURO;SANO KENJI;HAYASE SHUJI
分类号 C23C18/12;H01L21/20;H01L31/04 主分类号 C23C18/12
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