| 摘要 |
Apparatus for depositing a film on a substrate (24) includes a housing (10) that encloses a sputtering chamber (12), a substrate holder (30) for positioning a substrate (24) in the sputtering chamber (12) and a sputtering gun (20, 22), including a sputtering target (40, 44), for depositing a film of atoms of the target (40, 44) on a surface of the substrate (24). The chamber (12) contains a gas which forms a plasma. An electrical potential is applied to the substrate (24) for accelerating ions from the plasma toward the substrate (24). The apparatus includes a substrate electrode (60, 62) for controlling trajectories of ions accelerated from the plasma toward the substrate (24). The substrate electrode (60, 62) permits movement of the substrate (24) by the substrate holder (30) and establishes a substantially uniform electrical potential around the periphery of the substrate (24) as viewed from the plasma. The substrate electrode (60, 62) may be biased so that ions substantially uniformly bombard the surface of the substrate (24).
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