发明名称 |
FEMFET-Vorrichtung und Verfahren zu deren Herstellung |
摘要 |
The present invention relates to a FEMFET device with a semiconductor substrate (10) and to at least one field effect transistor (S, D, K, GS) which is provided in the semiconductor substrate (10). Said field effect transistor has a source area (S), a drain area (D), a channel area (K) and a gate stack (GS). Said gate stack (GS) has at least one ferroelectric layer (FE) and at least one thin diffusion barrier layer (50) being arranged between the lowest ferroelectric layer (FE) and the semiconductor substrate (10) and being configured in such a way that an out-diffusion of the components of the ferroelectric layer/s (FE) into the semiconductor substrate (10) is essentially prevented.
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申请公布号 |
DE19857038(A1) |
申请公布日期 |
2000.06.29 |
申请号 |
DE19981057038 |
申请日期 |
1998.12.10 |
申请人 |
SIEMENS AG |
发明人 |
SCHLOESSER, TILL;HANEDER, THOMAS |
分类号 |
H01L21/8247;H01L21/02;H01L21/28;H01L21/8246;H01L27/105;H01L29/51;H01L29/788;H01L29/792;(IPC1-7):H01L29/78;G11C11/22 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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