| 摘要 |
PROBLEM TO BE SOLVED: To reduce write errors in continuous long time reading by forming a control gate electrode on a drain diffusion layer and a source diffusion layer formed on a semiconductor substrate with a gate insulating film in between and forming a variable resistor element between it and the source diffusion layer. SOLUTION: A p-type well 1 is formed on a semiconductor substrate and elements are isolated by means of a trench element isolation insulating film 2. Drain and source diffusion layers 9 are formed in the p-type well 1 and a tunnel region diffusion layer 6 is formed at one end of the drain and source diffusion layers 9, respectively. A gate insulating film 3 is formed on the tunnel region diffusion layer 6 of the drain and source, and a control gate electrode 4 is formed on the layer 3. A tunnel insulating film 7 and a sidewall floating gate electrode 8 with the tunnel insulating film 7 in between are formed on the gate electrode 4 on the side of the tunnel region diffusion layer 6 of the source. A protective insulating film 5 for protecting the gate electrode 4 is formed and an element protective insulating film 10 and wiring 11 are formed on these films and connected through holes.
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