发明名称 |
Method for fabricating capacitor in integrated circuit |
摘要 |
A method for fabricating a capacitor in an integrated circuit, using tantalum oxide as the dielectric layer to obtain a higher capacitance. A barrier layer is formed between the polysilicon layer and the tantalum oxide layer to prevent the formation of a silicon oxide layer. Thus, that capacitance of the capacitor is not reduced by the additional thickness of the silicon oxide layer.
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申请公布号 |
US6156600(A) |
申请公布日期 |
2000.12.05 |
申请号 |
US19980195173 |
申请日期 |
1998.11.17 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
CHAO, FANG-CHING;HSIEH, WEN-YI;HUANG, KUO-TAI |
分类号 |
H01L27/04;H01L21/02;H01L21/316;H01L21/822;H01L21/8242;H01L27/108;(IPC1-7):H01L21/823 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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