| 摘要 |
PROBLEM TO BE SOLVED: To provide a polymer-based resist material responsive to high-energy beams and excellent in sensitivity, resolution, and plasma etching resistance at wavelengths of 200 nm or shorter, particularly at wavelength of 170 nm or shorter, and, because of these characteristics, low in absorption at the F2 excimer laser exposure wavelength, capable of easily forming a very fine pattern vertical to the substrate, and therefore quite suitable for use as a fine pattern forming material in the manufacture of VLSIs. SOLUTION: The polymer compound contains the repeating unit represented by formula (1), wherein R1, R2, R3, and R5 denote hydrogen atoms, fluorine atoms, or 1-20C linear, branched, or cyclic alkyl groups or fluorinated alkyl groups; R4 denotes an acid unstable group; 0<=a<5, 0<=b<5, 0<a+b<5, and 0<c<5; and m and n are positive numbers. |
