发明名称 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE AND RETICLE AND SEMICONDUCTOR WAFER
摘要 <p>PROBLEM TO BE SOLVED: To provide a method for fabricating a semiconductor device, a reticle and a semiconductor wafer in which a necessary and sufficient alignment mark can be provided without having any effect on the space factor of an integrated circuit chip for a pattern of single exposure shot. SOLUTION: Initial stage of a process for exposing a specified mask pattern such that a plurality of integrated circuit chip regions 12 are formed on a semiconductor wafer WF while being spaced apart by a scribe line region 13 is shown. When a well region is formed at first, for example, an alignment mark 14 for next exposure process is provided additionally in the integrated circuit chip region 12.</p>
申请公布号 JP2002158159(A) 申请公布日期 2002.05.31
申请号 JP20000353352 申请日期 2000.11.20
申请人 SEIKO EPSON CORP 发明人 KOGA KAZUO
分类号 G03F1/42;G03F7/22;G03F9/00;H01L21/027;H01L21/301;(IPC1-7):H01L21/027;G03F1/08 主分类号 G03F1/42
代理机构 代理人
主权项
地址