| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a silica fine structure, such that when a silica layer is subjected to dry etching, etching can be stopped at a desired level. SOLUTION: The method for manufacturing a silica fine structure includes processes of first process for partially depositing an etching stopping layer 13 in the region to be etched of the upper part of a first silica layer 12 deposited on a semiconductor substrate 11, a second process for depositing a second silica layer 14 on the etching stopping layer 13 and on the first silica layer 12, a third process for forming a mask 14 patterned into the form of the above region to be etched on the second silica layer 14, a fourth process for removing by dry etching the second silica layer 14 which is deposited in the region to be etched by using the mask 15, and a fifth process for removing the etching stopping layer 13 by wet etching. |
