| 摘要 |
Providing a capacitance element which prevents short-circuit between adjacent storage node layers caused by an adhering conductive foreign matter. A method of manufacturing a capacitance element in which a plurality of aperture portions are formed in an insulation layer on a semiconductor substrate and a storage node layer is formed at inner surfaces of the aperture portions, comprising the steps of forming a plurality of aperture portions in an insulation layer from a surface of a silicon oxide film, forming a conductive layer so as to cover the insulation layer and the silicon oxide film, removing the conductive layer on the silicon oxide film so that the conductive layer remaining inside the aperture portions becomes storage node layers, and removing silicon oxide film.
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