| 摘要 |
PROBLEM TO BE SOLVED: To provide the manufacturing method of a semiconductor device having a fine pattern which exceeds the conventional limit of conventional fine work by succeeding previously established i-beam exposure technology as it is and correcting etching technology. SOLUTION: The manufacturing method of the semiconductor device has a process for forming an etched material on one main face of a semiconductor substrate, a process for forming a mask pattern on the etched material, and a process for etching an area except for the mask pattern of the etched material by a dry etching method by using etchant gas and polymer deposited gas in a state where an etching suppression wall is formed on the upper part of a mask pattern side. The etched material after etching is a gate electrode or a wiring pattern.
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