发明名称 |
MOCVD and annealing processes for C-axis oriented ferroelectric thin films |
摘要 |
A method of fabricating a c-axis ferroelectric thin film includes preparing a substrate; depositing a layer of ferroelectric material by metal organic chemical vapor deposition, including using a precursor solution having a ferroelectric material concentration of about 0.1 M/L at a vaporizer temperature of between about 140° C. to 200° C.; and annealing the substrate and the ferroelectric material at a temperature between about 500° C. to 560° C. for between about 30 minutes to 120 minutes.
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申请公布号 |
US6475813(B1) |
申请公布日期 |
2002.11.05 |
申请号 |
US20010929711 |
申请日期 |
2001.08.13 |
申请人 |
SHARP LABORATORIES OF AMERICA, INC. |
发明人 |
LI TINGKAI;PAN WEI;HSU SHENG TENG |
分类号 |
C23C16/40;C30B25/02;H01L21/314;H01L21/316;H01L21/8246;H01L27/105;(IPC1-7):A01L21/00 |
主分类号 |
C23C16/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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