| 摘要 |
PROBLEM TO BE SOLVED: To enable the chemical and mechanical polishing at a pH of 10 and below of a semiconductor device and to eliminate the occurrence of damage due to polishing at the high polishing rate of the semiconductor device by a method wherein a work containing a silicon oxide or containing a silicon oxide as its main component is polished using a polishing agent containing abrasive grains, which contain magnesium oxide as their main component. SOLUTION: A work containing a silicon oxide or containing a silicon oxide as its main component is polished using a polishing agent containing abrasive grains, which contain magnesium oxide as their main component. Moreover, an insulatator layer, comprising a silicon oxide layer, on the surface of a semiconductor substrate is polished using a polishing agent containing abrasive grains, which contain magnesium oxide as their main component, and after the insulator layer is flattened, the polished semiconductor substrate is cleaned using an acid selected from among a hydrochloric acid, a nitric acid and/or a sulfuric acid. As the polishing agent for the work containing the silicon oxide as its main component, such as glass and a quartz wafer, a polishing agent containing abrasive grains, which contain magnesium oxide as their main component, is used, whereby the high polishing rate of a semiconductor device can be obtained. |
