LAMINATED DIELECTRIC ISOLATION WAFER AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a laminated dielectric isolation wafer which is capable of protecting a support substrate wafer against warpage caused by interstitial oxygen concentration or OSF density and restrained from warping more after devices are formed and to provide its manufacturing method. SOLUTION: Since the interstitial oxygen concentration of a silicon wafer 20 is set at 1.4×1018atoms/cm3or below or the OSF density of the silicon wafer 20 is set at 20,000/cm2or below after devices are provided, the silicon wafer 20 can be protected against warpage caused by the interstitial oxygen concentration or OSF density. As the result, the silicon wafer 20 can be prevented from warping more after a device process is carried out, and a transfer trouble or the like occurring in the laminated dielectric isolation wafer due to a warpage increase in the silicon wafer 20 can be reduced in frequency of occurrence. COPYRIGHT: (C)2005,JPO&NCIPI